A group of researchers from Rice University led by chemist James Tour came to a discovery that it was possible to make bits of computer memory from silicon oxide and carbon. Their research could lead to transparent, non-volatile, heat- and radiation-resistant memory chips which provide more memory storage while being smaller compared to memory chips… »

Researchers from the University College London (UCL) managed to construct the first purely silicon oxide-based ‘Resistive RAM’ (ReRAM) memory chip that can operate in ambient conditions. ReRAM chips promise far greater speed than currently available memory technologies, significantly greater memory storage, such as the Flash memory used on USB sticks, and require much less energy… »